Publications associated to project

Project no. TH02010014 of TACR
Novel semiconductor structures for advanced electronic applications
A. Hospodkova    (2017-2020)

Total: 3
T. Hubáček, A. Hospodková, K. Kuldová, M. Slavická Zíková, J. Pangrác, J. Čížek, M.O. Liedke, M. Butterilng, A. Wagner, P. Hubík, E. Hulicius
Improvement of luminescence properties of n-GaN using TEGa precursor
Journal of Crystal Growth 531 (2020) 125383(1)-125383(7).

A. Hospodková, F. Dominec
GaN based epitaxial multilayer structure for high electron mobility transistors and transistor containing this structure
Patent No.307942 (2019).

E. Hulicius, K. Kuldová, A. Hospodková, J. Pangrác, F. Dominec, D. Gregušová, R. Stoklas, O. Pohorelec, J. Novák, J. Humlíček, I. Pelant, O. Cibulka, K. Herynková
MOVPE GaN/AlGaN HEMT nano-structures
Nanocon 2018, October 17-19, 2018, Brno, Hotel Voroněž, Czech Republic. Oral presentation. Proceedings, p.31.