The project aims to industrial research and experimental development of heteroepitaxial growth of nitride structures for semiconductor applications:
1) R&D of technology for MOCVD growth of functional nitride structures on developed substrates with diameter up 200 mm.
2) R&D and characterization of functional nitride structures for semiconductor applications (e.g. functional structures for HEMT).
3) R&D of new methods for evaluation of parameters of nitride structures for semiconductor applications.
Support for the development of cooperation of industrial enterprises and research institutions significantly contributes to the achievement and application of the results - new technology and functional samples, new characterization methods - in semiconductor manufacturing in the CR.