The main aim of this project is a development of technology and preparation of unique, not yet available, fast (in the scale of ns) InGaN/GaN screens with high resolution (in the scale of nm) for visualisation of ionizing radiation and preparation of functional samples. Description in stages enables a device production. Certified technology of 2 inches YAP crystal growth will be realized; technology of epi-ready YAP crystal and active structure of new type of MOVPE nitride screens prepared on different substrates will be realized as well. These fast screens will be tested by end users – future consumers. By this way, fast imaging portfolio of CRYTUR s.r.o. will expand and it will be possible to construct detection systems which are
subject of a strategic plan of company for years 2020-25.