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The aim of the project is to develop the emerging field of antiferromagnetic (AFM) spintronics as a new discipline of electronics based on spin in AFM materials. The project aims at establishing a material base of this field and at developing its theory. Experimental objective of the project is to identify and demonstrate new functional principles for effective detection and manipulation of the AFM spins and their utilization e.g. as nonvolatile ultrafast memory, robust against ionizing radiation and magnetic fields, and capable of high integration.
The project is based on internationally renowned expertize of the team members and on their groundbreaking results in the field of ferromagnetic semiconductors, and it further extends their pioneering work on the antiferromagnetic spintronics. Technologically it relies on the LNSM infrastructure with the necessary extension of its MBE facility.
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