Research and development of new plasma-activated ALD system with a unique source of low-temperature plasma based on microwave surfatron and ECWR discharge

The aim of the project is design, development and implementation of plasma ALD system for low-temperature deposition of thin dielectric and metal films with possibility of application of the atomic layer etching (ALEt). The developed system will appropriately implement the low-temperature discharge into the ALD system. The project will use MW surfatron and ECWR plasma sources. The project focus on the creation of a homogeneous and sufficiently active plasma (high degree of ionization, dissociation and excitation of precursors and reactants) above the substrate. We expect to achieve a higher quality of deposited films compared to the available plasma-activated ALD processes and that developed technology will allow to prepare new types of thin films on new progressive types of substrates.