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The transition metal (TM) doped AIIIBV semiconductors belong to a new class of advanced materials, dilute
magnetic semiconductors, which have recently received much experimental and theoretical attention as a
suitable spin source for spintronic devices, such as spin transitors, LEDs, magnetic RAMs and sensors. Some
of the highly doped wide band gap materials like (Ga,Mn)N reveal a ferromagnetic like behavior near and
above room temperature, which is considered as a major criterium for spintronic applications. The present
project focuses on material and technological aspects of the TM doped AIIIN thin films fabricated by
metalorganic vapor phase epitaxy (MOVPE) technique. Three different methods will be employed to
incorporate TM (Mn, Cr, Fe, Co) into GaN (AlN) thin layers: (a) ion implantation followed by annealing, (b)
diffusion at elevated temperatures from vapor deposited metallic layers into intrinsic GaN, and, (c|) in-situ
MOVPE using MO precursors ( (C5H5)2TM ) as TM sources. The prepared materials will be chemically and
structurally characterized and their magnetic and electric transport properties will be thoroughly examined. The
thermodynamic and electronic structure calculations will be used as auxiliary tools to model the MOVPE
process and to interpret the physical properties.
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