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Materials with both semiconductor and magnetic properties, which are commonly called dilute magnetic semiconductors (DMS), are currently considered as most applicable in the fabrication of spintronic devices - viable candidates for advanced computing and communication technologies.We aim to study the wide-gap GaN where, in order to produce a DMS with a high ferromagnetic Curie temperature, the transition metal (TM) and rare earths (RE) will be doped into thin layers of the host GaN structure. Simultaneously, TM and RE doped bulk GaN samples will be prepared as well. The samples will be characterized by means of spectroscopic methods and their structural, magnetic and magnetotransport properties will be measured. The observed characteristics will be critically analyzed and confronted with calculations of electronic structure and the origin of magnetism will be discussed regarding both the intrinsic mechanism of exchange interactions and the possible formation of other magnetic phases.
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